smd type ic www.kexin.com.cn 1 smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 medium power transistor FMMT491A features very low equivalent resistance, sot23 npn rsilicon planar absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 5v peak collector current i cm 1a collector current i c 2a power dissipation p tot 500 mw operating and storage temperature range t j, t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v (br)cbo i c =100a 40 v collector-emitter breakdown voltage * v (br)ceo i c =10ma 40 v emitter-base breakdown voltage v (br)ebo i e =100a 5v collector cutoff current i cbo v cb =30v,v ces =30v 100 na emitter cut-off current i ebo v eb =4v 100 na collector-emitter saturation voltage * v ce( sat) i c =500ma,i b =50ma i c =1a,i b =100ma 0.3 0.50 v base-emitter saturation voltage * v be( sat) i c =1a,i b =100ma 1.1 v base-emitter voltage * v be(on) i c =1a,v ce =5v 1.0 v i c =1ma,v ce =5v 300 i c =500ma,v ce =5v 300 900 i c =1a,v ce =5v 200 i c =2a,v ce =5v 35 current-gain-bandwidth product f t i c =50ma,v ce =10v,f=100mhz 150 mhz output capacitance c obo v cb =10v,f=1mhz 10 pf * pulse test: tp 300 s; d 0.02. static forward current transfer ratio * h fe marking marking 41a
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